Invention Application
- Patent Title: METHODS FOR ASSESSING SEMICONDUCTOR STRUCTURES
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Application No.: US15893055Application Date: 2018-02-09
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Publication No.: US20180233420A1Publication Date: 2018-08-16
- Inventor: Igor Rapoport , Srikanth Kommu , Igor Peidous , Gang Wang , Jeffrey L. Libbert
- Applicant: SunEdison Semiconductor Limited (UEN201334164H)
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L23/66
Abstract:
Methods for assessing the quality of a semiconductor structure having a charge trapping layer to, for example, determine if the structure is suitable for use as a radiofrequency device are disclosed. Embodiments of the assessing method may involve measuring an electrostatic parameter at an initial state and at an excited state in which charge carriers are generated.
Information query
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