Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
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Application No.: US15873909Application Date: 2018-01-18
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Publication No.: US20180211964A1Publication Date: 2018-07-26
- Inventor: Li-Wei Feng , Ying-Chiao Wang , Tzu-Tsen Liu , Tsung-Ying Tsai , Chien-Ting Ho
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Priority: CN201710059512.9 20170124
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L27/24 ; H01L21/764 ; H01L21/02

Abstract:
A semiconductor device and method of forming the same, the semiconductor device includes plural bit lines, plural conductive patterns, plural conductive pads and a spacer. The bit lines are disposed on a substrate, along a first direction. The conductive patterns are disposed on the substrate, along the first direction, wherein the conductive patterns and the bit lines are alternately arranged in a second direction perpendicular to the first direction. The conductive pads are arranged in an array and disposed over the conductive patterns and the bit lines. The spacer is disposed between the bit lines and the conductive patterns, under the conductive pads, wherein the spacers includes a tri-layered structure having a first layer, a second layer and a third layer, and the second layer includes a plurality of air gaps separated arranged along the first direction.
Public/Granted literature
- US10854676B2 Semiconductor device having capped air caps between buried bit lines and buried gate Public/Granted day:2020-12-01
Information query
IPC分类: