- 专利标题： METHOD OF MANUFACTURNG SOLAR CELL
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申请号： US15866052申请日： 2018-01-09
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公开(公告)号： US20180204737A1公开(公告)日： 2018-07-19
- 发明人: Kyoungsoo LEE , Sunghyun HWANG , Sangwook PARK
- 申请人： LG ELECTRONICS INC.
- 申请人地址： KR SEOUL
- 专利权人： LG ELECTRONICS INC.
- 当前专利权人： LG ELECTRONICS INC.
- 当前专利权人地址： KR SEOUL
- 优先权： KR10-2017-0008116 20170117
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L31/072 ; H01L21/02 ; H01L21/28
摘要：
A method of manufacturing a solar cell is disclosed. The method of manufacturing the solar cell includes depositing an intrinsic amorphous silicon layer on a surface of a semiconductor substrate, depositing an amorphous silicon layer containing impurities on the intrinsic amorphous silicon layer to form a conductive region, and forming an electrode electrically connected to the conductive region. The depositing of the intrinsic amorphous silicon layer includes depositing the intrinsic amorphous silicon on the surface of the semiconductor substrate at a deposition rate of 0.5 nm/sec to 2.0 nm/sec.
公开/授权文献
- US10593558B2 Method of manufacturing solar cell 公开/授权日：2020-03-17
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