发明申请
- 专利标题: SEMICONDUCTOR DEVICE, POWER SUPPLY APPARATUS AND HIGH-FREQUENCY AMPLIFIER
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申请号: US15911920申请日: 2018-03-05
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公开(公告)号: US20180197979A1公开(公告)日: 2018-07-12
- 发明人: Shirou OZAKI , Kozo Makiyama , NAOYA OKAMOTO
- 申请人: FUJITSU LIMITED
- 申请人地址: JP Kawasaki-shi
- 专利权人: FUJITSU LIMITED
- 当前专利权人: FUJITSU LIMITED
- 当前专利权人地址: JP Kawasaki-shi
- 优先权: JP2015-213150 20151029
- 主分类号: H01L29/778
- IPC分类号: H01L29/778 ; H01L29/51 ; H01L29/205 ; H01L29/20 ; H01L21/02 ; H01L21/28
摘要:
A semiconductor device includes a semiconductor stacked structure in which a semiconductor layer including an electron supply layer and an electron transit layer is stacked, and a gate electrode contacting with the semiconductor layer included in the semiconductor stacked structure or an insulating layer. The portion of the gate electrode contacting with the semiconductor layer or the insulating layer is an oxide of a metal configuring the portion of the gate electrode contacting with the semiconductor layer or the insulating layer.
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