- 专利标题： Fin Field Effect Transistors having Conformal Oxide Layers and Methods of Forming Same
-
申请号： US15357675申请日： 2016-11-21
-
公开(公告)号： US20180145143A1公开(公告)日： 2018-05-24
- 发明人: Chia-Cheng Chen , Liang-Yin Chen , Xiong-Fei Yu , Syun-Ming Jang , Hui-Cheng Chang , Meng-Shu Lin
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号： H01L29/423
- IPC分类号： H01L29/423 ; H01L21/8234 ; H01L29/51 ; H01L27/088 ; H01L21/28 ; H01L21/02 ; H01L29/78
摘要：
An embodiment fin field-effect-transistor (finFET) includes a semiconductor fin comprising a channel region and a gate oxide on a sidewall and a top surface of the channel region. The gate oxide includes a thinnest portion having a first thickness and a thickest portion having a second thickness different than the first thickness. A difference between the first thickness and the second thickness is less than a maximum thickness variation, and the maximum thickness variation is in accordance with an operating voltage of the finFET.
公开/授权文献
信息查询
IPC分类:
