A method of forming an improved field-effect transistor device is provided. The method includes forming a tensile stressor near a first semiconductor fin. The first semiconductor fin is a fin of an n-channel field-effect transistor. The n-channel field-effect transistor is formed on a substrate. The method also includes forming a compressive stressor near a second semiconductor fin. The second semiconductor fin is a fin of a p-channel field effect transistor. The p-channel field-effect transistor is formed on the substrate. The method can also include forming neutral material over the at least one n-channel and p-channel field effect transistor. The method can also include achieving different device performance by configuring a stressor distance to fin and/or by configuring a stressor volume.