- 专利标题： MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
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申请号： US15487761申请日： 2017-04-14
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公开(公告)号： US20180053779A1公开(公告)日： 2018-02-22
- 发明人: Hae Chan PARK , Jang Won KIM , Gong Hyun SA
- 申请人： SK hynix Inc.
- 申请人地址： KR Icheon-si Gyeonggi-do
- 专利权人： SK hynix Inc.
- 当前专利权人： SK hynix Inc.
- 当前专利权人地址： KR Icheon-si Gyeonggi-do
- 优先权： KR1020160105752 20160819
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L21/02 ; H01L21/768 ; H01L21/762 ; H01L21/3213 ; H01L29/49 ; H01L21/28
摘要：
A manufacturing method of a semiconductor device may be provided. The method may include forming stacks including interlayer insulating layers and separated by a slit, the interlayer insulating layers surrounding a channel layer and stacked to be spaced apart from one another with an interlayer space interposed therebetween. The method may include forming a conductive pattern filling the interlayer space. The method may include forming an isolation layer on a surface of the conductive pattern by oxidizing a portion of the conductive pattern by performing an oxidizing process.
公开/授权文献
- US10373971B2 Manufacturing method of semiconductor device 公开/授权日：2019-08-06
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