Invention Application
- Patent Title: METHOD OF FORMING FIN-SHAPED STRUCTURE
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Application No.: US15688885Application Date: 2017-08-29
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Publication No.: US20170358455A1Publication Date: 2017-12-14
- Inventor: Wen-Jiun Shen , Ssu-I Fu , Yen-Liang Wu , Chia-Jong Liu , Yu-Hsiang Hung , Chung-Fu Chang , Man-Ling Lu , Yi-Wei Chen
- Applicant: UNITED MICROELECTRONICS CORP.
- Priority: CN201410454915.X 20140909
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L27/088 ; H01L21/306 ; H01L21/8234 ; H01L21/02
Abstract:
A fin-shaped structure includes a substrate having a first fin-shaped structure located in a first area and a second fin-shaped structure located in a second area, wherein the second fin-shaped structure includes a ladder-shaped cross-sectional profile part. The present invention also provides two methods of forming this fin-shaped structure. In one case, a substrate having a first fin-shaped structure and a second fin-shaped structure is provided. A treatment process is performed to modify an external surface of the top of the second fin-shaped structure, thereby forming a modified part. A removing process is performed to remove the modified part through a high removing selectivity to the first fin-shaped structure and the second fin-shaped structure, and the modified part, thereby the second fin-shaped structure having a ladder-shaped cross-sectional profile part is formed.
Public/Granted literature
- US10418251B2 Method of forming fin-shaped structure having ladder-shaped cross-sectional profile Public/Granted day:2019-09-17
Information query
IPC分类:
