Invention Application
- Patent Title: SCHOTTKY BARRIER DIODE AND ELECTRONIC APPARATUS
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Application No.: US15600151Application Date: 2017-05-19
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Publication No.: US20170345950A1Publication Date: 2017-11-30
- Inventor: Shintaro SATO , Hideyuki Jippo
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki-shi
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki-shi
- Priority: JP2016-108177 20160531
- Main IPC: H01L29/872
- IPC: H01L29/872 ; H01L29/06 ; H01L29/16 ; H01L29/66
Abstract:
A Schottky barrier diode includes a graphene nanoribbon, a first electrode connected to one end of the graphene nanoribbon, and a second electrode connected to the other end of the graphene nanoribbon. The graphene nanoribbon includes a first part and a second part which are connected in the length direction of the graphene nanoribbon and which differ in electronic state. For example, edges of the first part in a length direction of the graphene nanoribbon are terminated with a first modifying group and edges of the second part in the length direction of the graphene nanoribbon are terminated with a second modifying group.
Public/Granted literature
- US10283649B2 Schottky barrier diode and electronic apparatus Public/Granted day:2019-05-07
Information query
IPC分类:
