Invention Application
- Patent Title: Integrated Fan-Out Structure with Guiding Trenches in Buffer Layer
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Application No.: US15495017Application Date: 2017-04-24
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Publication No.: US20170229433A1Publication Date: 2017-08-10
- Inventor: Po-Hao Tsai , Feng-Cheng Hsu , Li-Hui Cheng , Jui-Pin Hung , Jing-Cheng Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Main IPC: H01L25/10
- IPC: H01L25/10
Abstract:
A bottom package includes a molding compound, a buffer layer over and contacting the molding compound, and a through-via penetrating through the molding compound. A device die is molded in the molding compound. A guiding trench extends from a top surface of the buffer layer into the buffer layer, wherein the guiding trench is misaligned with the device die.
Public/Granted literature
- US10083946B2 Integrated fan-out structure with guiding trenches in buffer layer Public/Granted day:2018-09-25
Information query
IPC分类:
