Invention Application
- Patent Title: METHOD FOR FABRICATING SEMICONDUCTOR DEVICE INCLUDING FIN SHAPED STRUCTURE
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Application No.: US15465606Application Date: 2017-03-22
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Publication No.: US20170194193A1Publication Date: 2017-07-06
- Inventor: Chung-Yi Chiu , Shih-Fang Hong , Chao-Hung Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Priority: TW104126243 20150812
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L29/161 ; H01L29/66 ; H01L29/06 ; H01L21/02 ; H01L29/78
Abstract:
A semiconductor device and a method of fabricating the same, the semiconductor device includes a silicon substrate, a fin shaped structure and a shallow trench isolation. The fin shaped structure is disposed on the silicon substrate and includes a silicon germanium (SiGe) layer extending from bottom to top in the fin shaped structure. The shallow trench isolation covers a bottom portion of the fin shaped structure.
Public/Granted literature
- US09881831B2 Method for fabricating semiconductor device including fin shaped structure Public/Granted day:2018-01-30
Information query
IPC分类:
