发明申请
- 专利标题： SEMICONDUCTOR DEVICE WITH IMPROVED NARROW WIDTH EFFECT AND METHOD OF MAKING THEREOF
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申请号： US14981980申请日： 2015-12-29
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公开(公告)号： US20170186852A1公开(公告)日： 2017-06-29
- 发明人: Xueming Dexter TAN , Kiok Boone Elgin QUEK , Xinfu LIU
- 申请人： GLOBALFOUNDRIES Singapore Pte. Ltd.
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/266 ; H01L21/265 ; H01L29/06 ; H01L29/10
摘要：
A device and a method for forming a device are disclosed. The method includes providing a substrate prepared with a device region. A device well having second polarity type dopants is formed in the substrate. A threshold voltage (VT) implant is performed with a desired level of second polarity type dopants into the substrate. The VT implant forms a VT adjust region to obtain a desired VT of a transistor. A co-implantation with diffusion suppression material is performed to form a diffusion suppression (DS) region in the substrate. The DS region reduces or prevents segregation and out-diffusion of the VT implanted second polarity type dopants. A transistor of a first polarity type having a gate is formed in the device region. First and second diffusion regions are formed adjacent to sidewalls of the gate.
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