Invention Application
- Patent Title: SEMICONDUCTOR PROCESS AND SEMICONDUCTOR DEVICE
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Application No.: US14924532Application Date: 2015-10-27
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Publication No.: US20170117379A1Publication Date: 2017-04-27
- Inventor: Pin-Hong Chen , Kuo-Chih Lai , Chia-Chang Hsu , Chun-Chieh Chiu , Li-Han Chen , Min-Chuan Tsai , Kuo-Chin Hung , Wei-Chuan Tsai , Hsin-Fu Huang , Chi-Mao Hsu
- Applicant: United Microelectronics Corp.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/285 ; H01L29/78
Abstract:
A semiconductor process is described. A silicon-phosphorus (SiP) epitaxial layer is formed serving as a source/drain (S/D) region. A crystalline metal silicide layer is formed directly on the SiP epitaxial layer and thus prevents oxidation of the SiP epitaxial layer. A contact plug is formed over the crystalline metal silicide layer.
Public/Granted literature
- US09755047B2 Semiconductor process and semiconductor device Public/Granted day:2017-09-05
Information query
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