- 专利标题： REVERSE SELF ALIGNED DOUBLE PATTERNING PROCESS FOR BACK END OF LINE FABRICATION OF A SEMICONDUCTOR DEVICE
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申请号： US15390405申请日： 2016-12-23
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公开(公告)号： US20170110364A1公开(公告)日： 2017-04-20
- 发明人: Stanley Seungchul Song , Choh Fei Yeap , Zhongze Wang , John Jianhong Zhu
- 申请人： QUALCOMM Incorporated
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/033 ; H01L23/66 ; H01L23/522 ; H01L23/528
摘要：
In a particular embodiment, a method includes forming a second hardmask layer adjacent to a first sidewall structure and adjacent to a mandrel of a semiconductor device. A top portion of the mandrel is exposed prior to formation of the second hardmask layer. The method further includes removing the first sidewall structure to expose a first portion of a first hardmask layer. The method also includes etching the first portion of the first hardmask layer to expose a second portion of a dielectric material. The method also includes etching the second portion of the dielectric material to form a first trench. The method also includes forming a first metal structure within the first trench.
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