- 专利标题: PROCESS KIT SHIELD AND PHYSICAL VAPOR DEPOSITION CHAMBER HAVING SAME
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申请号: US15378402申请日: 2016-12-14
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公开(公告)号: US20170088942A1公开(公告)日: 2017-03-30
- 发明人: MUHAMMAD RASHEED , ADOLPH MILLER ALLEN , JIANQI WANG
- 申请人: APPLIED MATERIALS, INC.
- 主分类号: C23C14/56
- IPC分类号: C23C14/56 ; H01J37/34 ; C23C14/58 ; C23C14/35 ; C23C14/54
摘要:
Embodiments of process kit shields and physical vapor deposition (PVD) chambers incorporating same are provided herein. In some embodiments, a process kit shield for use in depositing a first material in a physical vapor deposition process may include an annular body defining an opening surrounded by the body, wherein the annular body is fabricated from the first material, and an etch stop coating formed on opening-facing surfaces of the annular body, the etch stop coating is fabricated from a second material that is different from the first material, the second material having a high etch selectivity with respect to the first material.
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