Invention Application
- Patent Title: SEMICONDUCTOR PROCESS
- Patent Title (中): 半导体工艺
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Application No.: US14656733Application Date: 2015-03-13
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Publication No.: US20160268125A1Publication Date: 2016-09-15
- Inventor: Kun-Ju Li , Po-Cheng Huang , Yu-Ting Li , Jen-Chieh Lin , Chih-Hsun Lin , Tzu-Hsiang Hung , Wu-Sian Sie , I-Lun Hung , Wen-Chin Lin , Chun-Tsen Lu
- Applicant: United Microelectronics Corp.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/321 ; H01L21/66 ; H01L21/324
Abstract:
A semiconductor process includes the following steps. A dielectric layer is formed on a substrate, where the dielectric layer has at least a dishing from a first top surface. A shrinkable layer is formed to cover the dielectric layer, where the shrinkable layer has a second top surface. A treatment process is performed to shrink a part of the shrinkable layer according to a topography of the second top surface, thereby flattening the second top surface.
Public/Granted literature
- US09443726B1 Semiconductor process Public/Granted day:2016-09-13
Information query
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