Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
- Patent Title (中): 半导体器件和电子设备
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Application No.: US14733776Application Date: 2015-06-08
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Publication No.: US20160211246A1Publication Date: 2016-07-21
- Inventor: Satoru AKIYAMA , Hiroyoshi KOBAYASHI , Hisao INOMATA , Sei SAITOU
- Applicant: Renesas Electronics Corporation
- Priority: JP2014-114063 20140602
- Main IPC: H01L25/18
- IPC: H01L25/18 ; H01L29/808 ; H01L23/498 ; H01L29/16 ; H01L29/20 ; H01L23/495 ; H01L29/78 ; H01L23/31
Abstract:
The manufacturing yield of a semiconductor device is improved. There is provided a semiconductor device of a cascode coupling system, which is equipped with a plurality of normally-on junction FETs using as a material, a substance larger in bandgap than silicon, and a normally-off MOSFET using silicon as a material. At this time, the semiconductor chip has a plurality of junction FET semiconductor chips (semiconductor chip CHP0 and semiconductor chip CHP1) formed with the junction FETs in a divided fashion, and a MOSFET semiconductor chip (semiconductor chip CHP2) formed with the MOSFET.
Public/Granted literature
- US09960153B2 Semiconductor device and electronic apparatus of a cascode-coupled system Public/Granted day:2018-05-01
Information query
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