- 专利标题： Zero Cost NVM Cell Using High Voltage Devices in Analog Process
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申请号： US15058601申请日： 2016-03-02
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公开(公告)号： US20160181436A1公开(公告)日： 2016-06-23
- 发明人: David Liu
- 申请人： JONKER LLC
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L29/10 ; H01L27/115 ; H01L29/78
摘要：
A non-volatile memory cell and array structure is disclosed situated within a high voltage region of an integrated circuit. The cell utilizes capacitive coupling based on an overlap between a gate and a drift region to impart a programming voltage. Programming is effectuated using a drain extension which can act to inject hot electrons. The cell can be operated as a one-time programmable (OTP) or multiple-time programmable (MTP) device. The fabrication of the cell relies on processing steps associated with high voltage devices, thus avoiding the need for additional masks, manufacturing steps, etc.
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