Invention Application
- Patent Title: METALORGANIC CHEMICAL VAPOR DEPOSITION OF OXIDE DIELECTRICS ON N-POLAR III-NITRIDE SEMICONDUCTORS WITH HIGH INTERFACE QUALITY AND TUNABLE FIXED INTERFACE CHARGE
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Application No.: US15009509Application Date: 2016-01-28
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Publication No.: US20160163846A1Publication Date: 2016-06-09
- Inventor: Xiang Liu , Umesh K. Mishra , Stacia Keller , Jeonghee Kim , Matthew Laurent , Jing Lu , Ramya Yeluri , Silvia H. Chan
- Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Applicant Address: US CA Oakland
- Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee Address: US CA Oakland
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/66
Abstract:
A method of fabricating a III-nitride semiconductor device, including growing an III-nitride semiconductor and an oxide sequentially to form an oxide/III-nitride interface, without exposure to air in between growth of the oxide and growth of the III-nitride semiconductor.
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