Invention Application
US20160111531A1 Semiconductor Devices Including Channel Regions with Varying Widths
审中-公开
包括具有不同宽度的通道区域的半导体器件
- Patent Title: Semiconductor Devices Including Channel Regions with Varying Widths
- Patent Title (中): 包括具有不同宽度的通道区域的半导体器件
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Application No.: US14723137Application Date: 2015-05-27
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Publication No.: US20160111531A1Publication Date: 2016-04-21
- Inventor: Yaoqi Dong
- Applicant: Samsung Electronics Co., Ltd.
- Priority: KR10-2014-0140164 20141016
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/10 ; H01L29/06 ; H01L29/423 ; H01L29/417
Abstract:
A semiconductor device includes a semiconductor substrate, a fin-type structure on the semiconductor substrate, and a gate on a portion of a top surface and portions of two side surfaces of the fin-type structure. The gate has a first width at a first level from the top surface of the substrate and a second width at a second level from the top surface of the substrate that is lower than the first level. The first width is greater than the second width, and a width of the gate is reduced from the first width to the second width between the first level and the second level.
Information query
IPC分类:
