发明申请
- 专利标题: DETECTION OF DEFECT IN DIE
- 专利标题(中): 检测缺陷
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申请号: US14329686申请日: 2014-07-11
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公开(公告)号: US20160011122A1公开(公告)日: 2016-01-14
- 发明人: Mario Pacheco , Deepak Goyal
- 申请人: Intel Corporation
- 主分类号: G01N21/95
- IPC分类号: G01N21/95 ; G01N21/88 ; G01N21/21 ; H01L21/67
摘要:
Generally discussed herein are systems, apparatuses, and methods that can detect a defect in a die. According to an example, a method can include transmitting a first beam of light with a wavelength and optical power configured to produce a reflected beam with at least one milli-Watt of power, linearly polarizing the first beam of light in a specific direction, circularly polarizing the linearly polarized light by a quarter wavelength to create circularly polarized light, directing the circularly polarized light to a device under test, linearly polarizing light reflected off the device under test by a quarter wavelength, or creating an image of the linearly polarized light reflected off the device under test.
公开/授权文献
- US09291576B2 Detection of defect in die 公开/授权日:2016-03-22
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