Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US14324252Application Date: 2014-07-07
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Publication No.: US20150357436A1Publication Date: 2015-12-10
- Inventor: Wen-Jiun Shen , Chia-Jong Liu , Yi-Wei Chen , Ssu-I Fu , Chung-Fu Chang , Yu-Hsiang Hung , Yen-Liang Wu , Man-Ling Lu
- Applicant: UNITED MICROELECTRONICS CORP.
- Priority: CN201410254365.7 20140610
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/3065 ; H01L29/78
Abstract:
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a gate structure on the substrate; performing a first dry etching process to form a recess in the substrate adjacent to the gate structure; and performing a second dry etching process to expand the recess.
Information query
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