发明申请
- 专利标题: Protection Layer In CMOS Image Sensor Array Region
- 专利标题(中): CMOS图像传感器阵列区域中的保护层
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申请号: US14144229申请日: 2013-12-30
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公开(公告)号: US20150189207A1公开(公告)日: 2015-07-02
- 发明人: Volume Chien , Yi-Sheng Liu , Chia-Yu Wei , Yun-Wei Cheng , Chi-Cherng Jeng
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 主分类号: H04N5/374
- IPC分类号: H04N5/374
摘要:
A semiconductor image sensor device having a conformal protective layer includes a semiconductor substrate a pixel-array region and a peripheral region. The conformal protective layer is disposed over a plurality of pixels having a photodiode and a plurality of transistors in the pixel-array region. Contacts to the plurality of transistors are surrounded by the conformal protective layer. In some embodiments, the conformal protective layer is the same material as transistor gate spacers in the peripheral region.
公开/授权文献
- US09473719B2 Protection layer in CMOS image sensor array region 公开/授权日:2016-10-18
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