Invention Application
- Patent Title: SEMICONDUCTOR COMPONENT HAVING A PASSIVATION LAYER AND PRODUCTION METHOD
- Patent Title (中): 具有钝化层的半导体元件和生产方法
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Application No.: US14485852Application Date: 2014-09-15
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Publication No.: US20150076597A1Publication Date: 2015-03-19
- Inventor: Hans-Joachim Schulze , Manfred Pfaffenlehner , Markus Schmitt
- Applicant: Infineon Technologies AG
- Priority: DE102013218494.8 20130916
- Main IPC: H01L21/322
- IPC: H01L21/322 ; H01L29/78 ; H01L29/872 ; H01L29/32
Abstract:
A semiconductor component and a method for producing a semiconductor component are described. The semiconductor component includes a semiconductor body including an inner zone and an edge zone, and a passivation layer, which is arranged at least on a surface of the semiconductor body adjoining the edge zone. The passivation layer includes a semiconductor oxide and that includes a defect region having crystal defects that serve as getter centers for contaminations.
Public/Granted literature
- US09177829B2 Semiconductor component having a passivation layer and production method Public/Granted day:2015-11-03
Information query
IPC分类:
