发明申请
- 专利标题: CHEMICAL DEPOSITION APPARATUS HAVING CONDUCTANCE CONTROL
- 专利标题(中): 具有导电控制的化学沉积装置
-
申请号: US13934594申请日: 2013-07-03
-
公开(公告)号: US20150011095A1公开(公告)日: 2015-01-08
- 发明人: Ramesh Chandrasekharan , Karl Leeser , Chunguang Xia , Jeremy Tucker
- 申请人: Lam Research Corporation
- 主分类号: H01L21/67
- IPC分类号: H01L21/67
摘要:
A chemical deposition apparatus having conductance control, which includes a showerhead module having a faceplate and a backing plate, the showerhead module including a plurality of inlets which deliver reactor chemistries to a cavity and exhaust outlets which remove reactor chemistries, a pedestal module configured to support a substrate and which moves vertically to close the cavity between the pedestal module and an outer portion of the faceplate, and at least one conductance control assembly, which is in fluid communication with the cavity via the exhaust outlets. The at least one conductance control assembly selected from one or more of the following: a ball valve assembly, a fluidic valve, magnetically coupled rotary plates, and/or a linear based magnetic system.
公开/授权文献
- US09490149B2 Chemical deposition apparatus having conductance control 公开/授权日:2016-11-08
信息查询
IPC分类: