Invention Application
- Patent Title: METAL GATE STRUCTURE AND FABRICATION METHOD THEREOF
- Patent Title (中): 金属门结构及其制造方法
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Application No.: US14490679Application Date: 2014-09-19
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Publication No.: US20150004780A1Publication Date: 2015-01-01
- Inventor: Tsun-Min Cheng , Min-Chuan Tsai , Chih-Chien Liu , Jen-Chieh Lin , Pei-Ying Li , Shao-Wei Wang , Mon-Sen Lin , Ching-Ling Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L21/8234
Abstract:
A metal gate structure located on a substrate includes a gate dielectric layer, a metal layer and a titanium aluminum nitride metal layer. The gate dielectric layer is located on the substrate. The metal layer is located on the gate dielectric layer. The titanium aluminum nitride metal layer is located on the metal layer.
Public/Granted literature
- US09281374B2 Metal gate structure and fabrication method thereof Public/Granted day:2016-03-08
Information query
IPC分类:
