A semiconductor arrangement includes a semiconductor body with a first active region, a second active region and an isolation region arranged between the first and the second active regions. At least one source region and at least one body region of a first transistor are integrated in the first active region. At least one source region and at least one body region of a second transistor are integrated in the second active region. Source and body regions of a third transistor are integrated in the second active region. The second transistor and the third transistor have a common source electrode. The first transistor, the second transistor and the third transistor have a common drain electrode.