发明申请
- 专利标题: RESIST UNDERLAYER FILM FORMING COMPOSITION AND METHOD FOR FORMING RESIST PATTERN USING THE SAME
- 专利标题(中): 抗静电膜形成组合物和使用其形成电阻图案的方法
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申请号: US14003480申请日: 2012-03-08
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公开(公告)号: US20140004465A1公开(公告)日: 2014-01-02
- 发明人: Ryuji Ohnishi , Takafumi Endo , Rikimaru Sakamoto
- 申请人: Ryuji Ohnishi , Takafumi Endo , Rikimaru Sakamoto
- 申请人地址: JP Tokyo
- 专利权人: NISSAN CHEMICAL INDUSTRIES, LTD.
- 当前专利权人: NISSAN CHEMICAL INDUSTRIES, LTD.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2011-056593 20110315
- 国际申请: PCT/JP2012/055963 WO 20120308
- 主分类号: G03F7/09
- IPC分类号: G03F7/09 ; G03F7/38
摘要:
A resist underlayer film forming composition for lithography, includes: a polymer including a structure of formula (1) below at a terminal of a polymer chain; a cross-linking agent; a compound that promotes a cross-linking reaction; and an organic solvent: (where R1, R2, and R3 are each independently a hydrogen atom, a linear or branched hydrocarbon group having a carbon atom number of 1 to 13, or a hydroxy group; at least one of R1, R2, and R3 is the hydrocarbon group; m and n are each independently 0 or 1; and a main chain of the polymer is bonded to a methylene group when n is 1 and bonded to a group represented by —O— when n is 0).
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