发明申请
- 专利标题： ADAPTIVE CHARGE BALANCED EDGE TERMINATION
- 专利标题（中）： 自适应平衡边缘终止
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申请号： US13484114申请日： 2012-05-30
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公开(公告)号： US20130320462A1公开(公告)日： 2013-12-05
- 发明人: Naveen Tipirneni , Deva N. Pattanayak
- 申请人： Naveen Tipirneni , Deva N. Pattanayak
- 申请人地址： US CA Santa Clara
- 专利权人： VISHAY-SILICONIX
- 当前专利权人： VISHAY-SILICONIX
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/22 ; H01L29/06
摘要：
In one embodiment, a semiconductor device can include a substrate including a first type dopant. The semiconductor device can also include an epitaxial layer located above the substrate and including a lower concentration of the first type dopant than the substrate. In addition, the semiconductor device can include a junction extension region located within the epitaxial layer and including a second type dopant. Furthermore, the semiconductor device can include a set of field rings in physical contact with the junction extension region and including a higher concentration of the second type dopant than the junction extension region. Moreover, the semiconductor device can include an edge termination structure in physical contact with the set of field rings.
公开/授权文献
- US09842911B2 Adaptive charge balanced edge termination 公开/授权日：2017-12-12
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