发明申请
- 专利标题： TRENCH MOSFET STRUCTURES USING THREE MASKS PROCESS
- 专利标题（中）： 使用三个掩模工艺的TRENCH MOSFET结构
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申请号： US13949336申请日： 2013-07-24
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公开(公告)号： US20130299901A1公开(公告)日： 2013-11-14
- 发明人: FU-YUAN HSIEH
- 申请人： Force Mos Technology Co., Ltd.
- 申请人地址： TW New Taipei City
- 专利权人： Force Mos Technology Co., Ltd.
- 当前专利权人： Force Mos Technology Co., Ltd.
- 当前专利权人地址： TW New Taipei City
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66
摘要：
A trench MOSFET comprising a plurality of trenched gates surrounded by source regions encompassed in body regions in active area. A plurality of trenched source-body contact structure penetrating through the source regions and extending into the body regions, are filled with tungsten plugs padded with a Ti layer, a first and a second TiN layer, wherein the second TiN layer is deposited after Ti silicide formation to avoid W spiking occurrence.
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IPC分类:
