Invention Application
- Patent Title: Transistor, Method for Fabricating the Transistor, and Semiconductor Device Comprising the Transistor
- Patent Title (中): 晶体管，晶体管的制造方法以及包含晶体管的半导体器件
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Application No.: US13698276Application Date: 2011-11-30
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Publication No.: US20130153913A1Publication Date: 2013-06-20
- Inventor: Qingqing Liang , Huicai Zhong , Huilong Zhu
- Applicant: Qingqing Liang , Huicai Zhong , Huilong Zhu
- Priority: CNCN201110336801.1 20111031
- International Application: PCT/CN11/01998 WO 20111130
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L27/088
Abstract:
A transistor, a method for fabricating a transistor, and a semiconductor device comprising the transistor are disclosed in the present invention. The method for fabricating a transistor may comprise: providing a substrate and forming a first insulating layer on the substrate; defining a first device area on the first insulating layer; forming a spacer surrounding the first device area on the first insulating layer; defining a second device area on the first insulating layer, wherein the second device area is isolated from the first device area by the spacer; and forming transistor structures in the first and second device area, respectively. The method for fabricating a transistor of the present invention greatly reduces the space required for isolation, significantly decreases the process complexity, and greatly reduces fabricating cost.
Public/Granted literature
- US08895403B2 Transistor, method for fabricating the transistor, and semiconductor device comprising the transistor Public/Granted day:2014-11-25
Information query
IPC分类:
