Methods of programming two terminal memory cells are provided. A method includes: (a) reading information of a memory page including first, second, and nth memory cells, the information including first, second, and nth program pulse tuning instructions; (b) creating a first program pulse in accordance with the first program pulse tuning instructions to program the first memory cell; (c) locking the first memory cell from further programming pulses; (d) creating a second program pulse in accordance with the second program pulse tuning instructions to program the second memory cell; (e) locking the second memory cell from further programming pulses; and (f) creating an nth program pulse in accordance with the nth program pulse tuning instructions to program the nth memory cell.