发明申请
- 专利标题： MASK FOR USE IN PHOTOLITHOGRAPHY, MANUFACTURING METHOD THEREOF AND MANUFACTURING METHOD OF DEVICES BY USING THE MASK
- 专利标题（中）： 用于光刻机的掩模，其制造方法和使用掩模的器件的制造方法
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申请号： US13565659申请日： 2012-08-02
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公开(公告)号： US20130143149A1公开(公告)日： 2013-06-06
- 发明人: Min KANG , Jong Kwang LEE , Jin Ho JU , Bong-Yeon KIM , Hyang-Shik KONG , Kyoung Sik KIM , Seung Hwa BAEK
- 申请人： Min KANG , Jong Kwang LEE , Jin Ho JU , Bong-Yeon KIM , Hyang-Shik KONG , Kyoung Sik KIM , Seung Hwa BAEK
- 申请人地址： KR Seoul KR GYEONGGI-DO
- 专利权人： Industry-Academic Cooperation Foundation, Yonsei University,SAMSUNG DISPLAY CO., LTD.
- 当前专利权人： Industry-Academic Cooperation Foundation, Yonsei University,SAMSUNG DISPLAY CO., LTD.
- 当前专利权人地址： KR Seoul KR GYEONGGI-DO
- 优先权： KR10-2011-0128486 20111202
- 主分类号： G03F1/00
- IPC分类号： G03F1/00 ; G03F7/20 ; G03F1/68
摘要：
Provided are a photomask, including: a substrate; an opaque pattern formed on the substrate and made of a material which does not penetrate light; a first dielectric layer formed on the substrate and the opaque pattern; and a negative refractive-index meta material layer formed on the first dielectric layer, in which a dispersion mode used in the photomask uses a Quasi bound mode, a manufacturing method of the photomask, and a manufacturing method of a substrate using the photomask.
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