Invention Application
US20130119338A1 RESISTANCE-SWITCHING MEMORY CELLS ADAPTED FOR USE AT LOW VOLTAGE
有权
适用于低电压使用的电阻开关存储器电池
- Patent Title: RESISTANCE-SWITCHING MEMORY CELLS ADAPTED FOR USE AT LOW VOLTAGE
- Patent Title (中): 适用于低电压使用的电阻开关存储器电池
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Application No.: US13734517Application Date: 2013-01-04
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Publication No.: US20130119338A1Publication Date: 2013-05-16
- Inventor: Xiaoyu Yang , Roy E. Scheuerlein , Feng Li , Albert T. Meeks
- Applicant: SanDisk 3D LLC
- Applicant Address: US CA Milpitas
- Assignee: SANDISK 3D LLC
- Current Assignee: SANDISK 3D LLC
- Current Assignee Address: US CA Milpitas
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer: (a) includes a material from the family consisting of XvOw, wherein X represents an element from the family consisting of Hf and Zr, and wherein the subscripts v and w have non-zero values that form a stable compound, and (b) has a thickness between 20 and 65 angstroms. Other aspects are also provided.
Public/Granted literature
- US08686476B2 Resistance-switching memory cells adapted for use at low voltage Public/Granted day:2014-04-01
Information query
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