SEMICONDUCTOR PROCESS

Invention Application

US20130078818A1 SEMICONDUCTOR PROCESS 有权

Title translation: 半导体工艺

Please log in to see more content

Patent Title: SEMICONDUCTOR PROCESS
Patent Title (中): 半导体工艺
Application No.: US13241232

Application Date: 2011-09-23
Publication No.: US20130078818A1

Publication Date: 2013-03-28
Inventor: Chien-Liang Lin , Shih-Hung Tsai , Chun-Hsien Lin , Te-Lin Sun , Shao-Wei Wang , Ying-Wei Yen , Yu-Ren Wang
Applicant: Chien-Liang Lin , Shih-Hung Tsai , Chun-Hsien Lin , Te-Lin Sun , Shao-Wei Wang , Ying-Wei Yen , Yu-Ren Wang
Main IPC: H01L21/31
IPC: H01L21/31

Abstract:

A semiconductor process includes the following steps. A substrate is provided. At least a fin-shaped structure is formed on the substrate and an oxide layer is formed on the substrate without the fin-shaped structure forming thereon. A thermal treatment process is performed to form a melting layer on at least a part of the sidewall of the fin-shaped structure.

Abstract(Chinese):

半导体工艺包括以下步骤。提供基板。至少在基板上形成翅片状结构，在基板上形成氧化层，而不形成翅片状结构。进行热处理工艺以在鳍状结构的侧壁的至少一部分上形成熔融层。

Public/Granted literature

US08426277B2 Semiconductor process Public/Granted day:2013-04-23

Information query

Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择