Invention Application
- Patent Title: SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THEREOF
- Patent Title (中): 具有金属门的半导体器件及其制造方法
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Application No.: US13180556Application Date: 2011-07-12
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Publication No.: US20130015524A1Publication Date: 2013-01-17
- Inventor: Chun-Wei Hsu , Po-Cheng Huang , Teng-Chun Tsai , Chia-Lin Hsu , Chih-Hsun Lin , Yen-Ming Chen , Chia-Hsi Chen , Chang-Hung Kung
- Applicant: Chun-Wei Hsu , Po-Cheng Huang , Teng-Chun Tsai , Chia-Lin Hsu , Chih-Hsun Lin , Yen-Ming Chen , Chia-Hsi Chen , Chang-Hung Kung
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/28
Abstract:
A semiconductor device having a metal gate includes a substrate having a plurality of shallow trench isolations (STIs) formed therein, at least a metal gate positioned on the substrate, and at least a pair of auxiliary dummy structures respectively positioned at two sides of the metal gate and on the substrate.
Public/Granted literature
- US08643069B2 Semiconductor device having metal gate and manufacturing method thereof Public/Granted day:2014-02-04
Information query
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