A method include disposing a semiconductor chip having an electrode pad formed on a circuit forming surface on one surface of a support so that the electrode pad contacts with the one surface of the support, forming a first insulating layer on the one surface of the support so that the first insulating layer covers at least a side surface of the semiconductor chip, removing the support and forming an interconnection terminal on the electrode pad, forming a second insulating layer on the circuit forming surface of the semiconductor chip and the first insulating layer so that the second insulating layer covers the interconnection terminal, exposing an end portion of the interconnection terminal from a top surface of the second insulating layer, and forming a wiring pattern that is electrically connected to the end portion of the interconnection terminal, on the top surface of the second insulating layer.