发明申请
- 专利标题： SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
- 专利标题（中）： 半导体存储器件及其制造方法
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申请号： US13004229申请日： 2011-01-11
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公开(公告)号： US20120061743A1公开(公告)日： 2012-03-15
- 发明人: Nobutaka WATANABE , Kazuyuki Higashi , Gaku Sudo
- 申请人： Nobutaka WATANABE , Kazuyuki Higashi , Gaku Sudo
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-202443 20100909
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/336
摘要：
According to one embodiment, a semiconductor memory device includes a stacked body, a contact, a semiconductor member, a charge storage layer, and a penetration member. The stacked body includes an electrode film stacked alternately with an insulating film. A configuration of an end portion of the stacked body is a stairstep configuration having a step provided every electrode film. The contact is connected to the electrode film from above the end portion. The semiconductor member is provided in a portion of the stacked body other than the end portion to pierce the stacked body in a stacking direction. The charge storage layer is provided between the electrode film and the semiconductor member. The penetration member pierces the end portion in the stacking direction. The penetration member does not include the same kind of material as the charge storage layer.
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