Invention Application
- Patent Title: Magnetic Tunnel Junction and Memristor Apparatus
- Patent Title (中): 磁隧道结和忆阻器
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Application No.: US13241381Application Date: 2011-09-23
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Publication No.: US20120014175A1Publication Date: 2012-01-19
- Inventor: Xiaobin Wang , Yiran Chen , Alan Wang , Haiwen Xi , Wenzhong Zhu , Hai Li , Hongyue Liu
- Applicant: Xiaobin Wang , Yiran Chen , Alan Wang , Haiwen Xi , Wenzhong Zhu , Hai Li , Hongyue Liu
- Applicant Address: US CA Scotts Valley
- Assignee: SEAGATE TECHNOLOGY LLC
- Current Assignee: SEAGATE TECHNOLOGY LLC
- Current Assignee Address: US CA Scotts Valley
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G01R27/14 ; G01R33/12
Abstract:
A magnetic memory device includes a magnetic tunnel junction having a free magnetic layer having a magnetization orientation that is switchable between a high resistance state magnetization orientation and a low resistance state magnetization orientation and a memristor solid state element electrically coupled to the magnetic tunnel junction. The memristor has a device response that is an integrated voltage versus an integrated current.
Public/Granted literature
- US08391055B2 Magnetic tunnel junction and memristor apparatus Public/Granted day:2013-03-05
Information query
