发明申请
- 专利标题： Method for Forming Shielded Gate Field Effect Transistors
- 专利标题（中）： 屏蔽栅场效应晶体管形成方法
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申请号： US13081400申请日： 2011-04-06
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公开(公告)号： US20110212586A1公开(公告)日： 2011-09-01
- 发明人: Thomas E. Grebs , Nathan Lawrence Kraft , Rodney Ridley , Gary M. Dolny , Joseph A. Yedinak , Christopher Boguslaw Kocon , Ashok Challa
- 申请人： Thomas E. Grebs , Nathan Lawrence Kraft , Rodney Ridley , Gary M. Dolny , Joseph A. Yedinak , Christopher Boguslaw Kocon , Ashok Challa
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/3205
摘要：
A method for forming a field effect transistor includes forming a trench in a semiconductor region and forming a dielectric layer lining lower sidewalls and bottom surface of the trench. After forming the dielectric layer, a lower portion of the trench is filled with a shield electrode. An inter-electrode dielectric (IED) is formed in the trench over the shield electrode by carrying out a steam ambient oxidation and carrying out a dry ambient oxidation. A gate electrode is formed in an upper portion of the trench. The gate electrode may be insulated from the shield electrode by the IED.
公开/授权文献
- US08803207B2 Shielded gate field effect transistors 公开/授权日：2014-08-12
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