Invention Application
- Patent Title: HYDROGEN ION-SENSITIVE FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF
- Patent Title (中): 氢离子敏感场效应晶体管及其制造方法
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Application No.: US12724435Application Date: 2010-03-16
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Publication No.: US20110169056A1Publication Date: 2011-07-14
- Inventor: Chin-Long Wey , Chin-Fong Chiu , Ying-Zong Juang , Hann-Huei Tsai , Chen-Fu Lin
- Applicant: Chin-Long Wey , Chin-Fong Chiu , Ying-Zong Juang , Hann-Huei Tsai , Chen-Fu Lin
- Applicant Address: TW Hsinchu City
- Assignee: National Chip Implementation Center National Applied Research Laboratories.
- Current Assignee: National Chip Implementation Center National Applied Research Laboratories.
- Current Assignee Address: TW Hsinchu City
- Priority: TW099100444 20100111
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336
Abstract:
A hydrogen ion-sensitive field effect transistor and a manufacturing method thereof are provided. The hydrogen ion-sensitive field effect transistor includes a semiconductor substrate, an insulating layer, a transistor gate, and a sensing film. A gate area is defined on the semiconductor substrate having a source area and a drain area. The insulating layer is formed within the gate area on the semiconductor substrate. The transistor gate is deposited within the gate area and includes a first gate layer. Further, the first gate layer is an aluminum layer, and a sensing window is defined thereon. The sensing film is an alumina film formed within the sensing window by oxidizing the first gate layer. Thus, the sensing film is formed without any film deposition process, and consequently the manufacturing method is simplified.
Public/Granted literature
- US08466521B2 Hydrogen ion-sensitive field effect transistor and manufacturing method thereof Public/Granted day:2013-06-18
Information query
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