Invention Application
US20110107472A1 SENSOR FOR QUANTITATIVE MEASUREMENT OF ELECTROMECHANICAL PROPERTIES AND MICROSTRUCTURE OF NANO-MATERIALS AND METHOD FOR MAKING THE SAME 有权
用于定量测量纳米材料的机械性能和微结构的传感器及其制造方法

SENSOR FOR QUANTITATIVE MEASUREMENT OF ELECTROMECHANICAL PROPERTIES AND MICROSTRUCTURE OF NANO-MATERIALS AND METHOD FOR MAKING THE SAME
Abstract:
A sensor for quantitative test electromechanical properties and microstructure of nano-materials and a manufacturing method for the sensor are provided. The sensor comprises a suspended structure, pressure-sensitive resistor cantilevers, support beams, bimetallic strip and other components. When the bimetallic strip produces bending deformation, one of the pressure-sensitive resistor cantilevers is actuated and then stretches the low-dimensional nano-materials which drive the other pressure-sensitive resistor cantilever to bend. Through signal changes are outputted by the Wheatstone bridge, the variable stresses of low-dimensional nano-materials are obtained. Meanwhile, the variable strains of low-dimensional nano-materials are obtained by the horizontal displacements between two cantilevers, so the stress-strain curves of low-dimensional nano-materials are worked out. When the low-dimensional nano-materials are measured in the power state, the voltage-current curves are also obtained. In addition, by the help of high resolution imaging system in the transmission electron microscopy, the mechanical-electrical-microstructure relationship of the nano-materials can be recorded in situ and in atomic lattice resolution.
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