发明申请
- 专利标题: Method and Apparatus for Building Multilayer Circuits
- 专利标题(中): 建立多层电路的方法和装置
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申请号: US12473044申请日: 2009-05-27
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公开(公告)号: US20100300734A1公开(公告)日: 2010-12-02
- 发明人: Billy D. Ables , Sankerlingam Rajendran , Premjeet Chahal
- 申请人: Billy D. Ables , Sankerlingam Rajendran , Premjeet Chahal
- 申请人地址: US MA Waltham
- 专利权人: Raytheon Company
- 当前专利权人: Raytheon Company
- 当前专利权人地址: US MA Waltham
- 主分类号: H05K1/09
- IPC分类号: H05K1/09 ; B23K31/02 ; H05K1/00
摘要:
An method for building multi-layer circuits without post process via fills is disclosed. The method includes aligning a first contact on a first substrate layer with a second contact on a second substrate layer; and fusion bonding the first contact to the second contact. A multilayer circuit is also disclosed. The multilayer circuit includes a first substrate layer including a first contact. The multilayer circuit also includes a second substrate layer including a second contact that is fusion bonded to the first contact such that the first and second contacts are aligned.
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