发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12482054申请日： 2009-06-10
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公开(公告)号： US20100065886A1公开(公告)日： 2010-03-18
- 发明人: Yoshiki KAMATA , Akira TAKASHIMA
- 申请人： Yoshiki KAMATA , Akira TAKASHIMA
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008-235514 20080912
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/335
摘要：
According to an aspect of the present invention, there is provided a semiconductor device including: a substrate that includes a semiconductor region including Ge as a primary component; a compound layer that is formed above the semiconductor region, that includes Ge and that has a non-metallic characteristic; an insulator film that is formed above the compound layer; an electrode that is formed above the insulator film; and source/drain regions that is formed in the substrate so as to sandwich the electrode therebetween.
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