发明申请
US20090269934A1 PLASMA TREATMENT METHOD FOR PREVENTING DEFECTS IN DOPED SILICON OXIDE SURFACES DURING EXPOSURE TO ATMOSPHERE
失效
用于防止暴露于大气中的氧化铝表面缺陷的等离子体处理方法
- 专利标题： PLASMA TREATMENT METHOD FOR PREVENTING DEFECTS IN DOPED SILICON OXIDE SURFACES DURING EXPOSURE TO ATMOSPHERE
- 专利标题（中）： 用于防止暴露于大气中的氧化铝表面缺陷的等离子体处理方法
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申请号： US12173331申请日： 2008-07-15
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公开(公告)号： US20090269934A1公开(公告)日： 2009-10-29
- 发明人: Chien-Teh Kao , Haichun Yang , Xinliang Lu , Mei Chang
- 申请人： Chien-Teh Kao , Haichun Yang , Xinliang Lu , Mei Chang
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
Formation of BPSG surface defects upon exposure to atmosphere is prevented by a plasma treatment method for converting boron and/or phosphorus materials separated from silicon near the surface of the doped glass layer to gas phase compounds. The treatment plasma is generated from a treatment process gas containing one of (a) a fluorine compound or (b) a hydrogen compound.
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