发明申请
US20090269934A1 PLASMA TREATMENT METHOD FOR PREVENTING DEFECTS IN DOPED SILICON OXIDE SURFACES DURING EXPOSURE TO ATMOSPHERE 失效
用于防止暴露于大气中的氧化铝表面缺陷的等离子体处理方法

PLASMA TREATMENT METHOD FOR PREVENTING DEFECTS IN DOPED SILICON OXIDE SURFACES DURING EXPOSURE TO ATMOSPHERE
摘要:
Formation of BPSG surface defects upon exposure to atmosphere is prevented by a plasma treatment method for converting boron and/or phosphorus materials separated from silicon near the surface of the doped glass layer to gas phase compounds. The treatment plasma is generated from a treatment process gas containing one of (a) a fluorine compound or (b) a hydrogen compound.
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