发明申请
US20090137108A1 Semiconductor device, semiconductor wafer, and methods of producing the same device and wafer
有权
半导体器件，半导体晶片，以及制造相同器件和晶片的方法
- 专利标题： Semiconductor device, semiconductor wafer, and methods of producing the same device and wafer
- 专利标题（中）： 半导体器件，半导体晶片，以及制造相同器件和晶片的方法
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申请号： US12320053申请日： 2009-01-15
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公开(公告)号： US20090137108A1公开(公告)日： 2009-05-28
- 发明人: Tatsuya Usami
- 申请人： Tatsuya Usami
- 申请人地址： JP Kawasaki
- 专利权人： NEC Electronics Corporation
- 当前专利权人： NEC Electronics Corporation
- 当前专利权人地址： JP Kawasaki
- 优先权： JP2000-143725 20000516
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/47
摘要：
A method of forming a multi-layered insulation film includes forming a first insulation layer using a first feed gas, the first insulation layer including methyl silsesquioxane (MSQ), forming a second insulation layer using a second feed gas, the second insulation layer including a polysiloxane compound having an Si—H group such that the second insulation layer is in contact with a top of the first insulation layer, and forming a third insulation layer including an inorganic material such that the third insulation layer is in contact with a top of the second insulation layer.
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