发明申请
- 专利标题： Integrated Circuit Arrangement Comprising a Field Effect Transistor, Especially a Tunnel Field Effect Transistor
- 专利标题（中）： 包括场效应晶体管，特别是隧道场效应晶体管的集成电路布置
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申请号： US11816822申请日： 2005-12-09
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公开(公告)号： US20090101975A1公开(公告)日： 2009-04-23
- 发明人: Juergen Holz , Ronald Kakoschke , Thomas Nirschl , Christian Pacha , Klaus Schruefer , Thomas Schulz , Doris Schmitt-Landsiedel
- 申请人： Juergen Holz , Ronald Kakoschke , Thomas Nirschl , Christian Pacha , Klaus Schruefer , Thomas Schulz , Doris Schmitt-Landsiedel
- 申请人地址： DE Neubiberg
- 专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人地址： DE Neubiberg
- 优先权： DE102005007822.2 20050221
- 国际申请： PCT/EP05/56659 WO 20051209
- 主分类号： H01L29/02
- IPC分类号： H01L29/02
摘要：
An explanation is given of, inter alia, tunnel field effect transistors having a thicker gate dielectric (GD1) in comparison with other transistors (T2) on the same integrated circuit arrangement (10). As an alternative or in addition, said tunnel field effect transistors have gate regions at mutually remote sides of a channel forming region or an interface between the connection regions (D1, S1) of the tunnel field effect transistor.
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