Invention Application
- Patent Title: MEMORY ELEMENT WITH THERMOELECTRIC PULSE
- Patent Title (中): 具有热电脉冲的记忆元件
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Application No.: US11842633Application Date: 2007-08-21
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Publication No.: US20090052222A1Publication Date: 2009-02-26
- Inventor: Yufeng Hu , Michael Seigler , Kalman Pelhos
- Applicant: Yufeng Hu , Michael Seigler , Kalman Pelhos
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A memory element comprises an addressable memory cell. A thermoelectric device couples to the memory cell. Electrical conductors provide a current pulse to the thermoelectric device. The current pulse generates a thermoelectric heat flow pulse between the thermoelectric device and the memory cell.
Public/Granted literature
- US07593278B2 Memory element with thermoelectric pulse Public/Granted day:2009-09-22
Information query
