METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING STACKED TRANSISTORS

Invention Application

US20090004789A1 METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING STACKED TRANSISTORS 失效

Title translation: 形成具有堆叠晶体管的半导体器件的方法

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Patent Title: METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING STACKED TRANSISTORS
Patent Title (中): 形成具有堆叠晶体管的半导体器件的方法
Application No.: US12203968

Application Date: 2008-09-04
Publication No.: US20090004789A1

Publication Date: 2009-01-01
Inventor: Hyun-Su Kim , Gil-Heyun Choi , Jong-Ho Yun , Sug-Woo Jung , Eun-Ji Jung
Applicant: Hyun-Su Kim , Gil-Heyun Choi , Jong-Ho Yun , Sug-Woo Jung , Eun-Ji Jung
Priority: KR10-2005-0032006 20050518
Main IPC: H01L21/84
IPC: H01L21/84 ; H01L21/44

METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING STACKED TRANSISTORS

Abstract:

There is provided a method of forming a semiconductor device having stacked transistors. When forming a contact hole for connecting the stacked transistors to each other, ohmic layers on the bottom and the sidewall of the common contact hole are separately formed. As a result, the respective ohmic layers are optimally formed to meet requirements or conditions. Accordingly, the contact resistance of the common contact may be minimized so that it is possible to enhance the speed of the semiconductor device.

Abstract(Chinese):

提供了一种形成具有堆叠晶体管的半导体器件的方法。当形成用于将堆叠的晶体管彼此连接的接触孔时，共同接触孔的底部和侧壁上的欧姆层分开形成。结果，各个欧姆层被最佳地形成以满足要求或条件。因此，公共接点的接触电阻可以最小化，从而可以提高半导体器件的速度。

Public/Granted literature

US07579225B2 Method of forming semiconductor device having stacked transistors Public/Granted day:2009-08-25

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/84	.....衬底不是半导体的，例如绝缘体