发明申请
- 专利标题： METHOD OF FORMING A SEMICONDUCTOR STRUCTURE COMPRISING A FIELD EFFECT TRANSISTOR HAVING A STRESSED CHANNEL REGION
- 专利标题（中）： 形成具有应力通道区域的场效应晶体管的半导体结构的方法
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申请号： US12017793申请日： 2008-01-22
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公开(公告)号： US20090001453A1公开(公告)日： 2009-01-01
- 发明人: Ralf Richter , Joerg Hohage , Michael Finken , Jana Schlott
- 申请人： Ralf Richter , Joerg Hohage , Michael Finken , Jana Schlott
- 优先权： DE102007030021.4 20070629
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/322
摘要：
A method of forming a semiconductor structure comprises providing a semiconductor substrate comprising at least one transistor element. An etch stop layer is formed over the transistor element. A stressed first dielectric layer is formed over the etch stop layer. A protective layer adapted to reduce an intrusion of moisture into the first dielectric layer is formed over the first dielectric layer. At least one electrical connection to the transistor element is formed. At least a portion of the protective layer remains over the first dielectric layer after completion of the formation of the at least one electrical connection.
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